Hello,
My objective is to estimate both conduction and switching losses of semiconductor devices that are used in a DAB converter operation. I have built a simulator using the blocks which can be found in the Simscape library blocks. The semiconductors have been modeled using
1) IGBT (ideal switching) block – IGBT (Ideal, Switching) – Ideal insulated-gate bipolar transistor for switching applications – MATLAB
2) Diode block – Diode – Piecewise linear, exponential, or tabulated diode – MATLAB.
After building the simulator, I ran it for sometime and obtained the simscape results data log for further analysis. And as mentioned in ee_getPowerLossSummary – Calculate dissipated power losses and switching losses – MATLAB, I used that method to estimate both switching and conduction losses using log data. I suppose that the "power" output of the function corresponds to conduction losses. Please advice me otherwise. If the "power" provides the total losses. The provided link of the ee_getPowerLossSummary, it says that the function is capable of estimating both conduction and switching losses for the above devices. Also, highlights that the reverse recovery loss can also be obtained.

However, when I run the simulation and run the function ee_GetPowerLossSummary afterwards, It only provides the conduction losses of the diode. Always, the diode losses are given as zero. It provides the conduction and switching losses for the IGBT. I have modeled the diode for reverse recovery operation by adding values from the datasheet. I was wondering whether there are any additional options to configure to get this to work. Also, I can see that the switching losses of the IGBTs fall drastically when a deadtime is used between High and Low switches in a same leg. When deadtime is not used, a signficant amount of switching losses are present. These observations have been made using the aforementioned ee_getPowerLossSummary function and as well as post processing the instantaneuos power waveforms obtained through power sensors. I don’t understand this since switching losses apply even when the deadtime is used since it only happens due to the IGBT’s own voltage and current. Not by the temporary shootthrough that happens if deadtime is not used.

Any suggestion, comment or advice regarding this process is highly appreciated. Thank you.Hello,
My objective is to estimate both conduction and switching losses of semiconductor devices that are used in a DAB converter operation. I have built a simulator using the blocks which can be found in the Simscape library blocks. The semiconductors have been modeled using
1) IGBT (ideal switching) block – IGBT (Ideal, Switching) – Ideal insulated-gate bipolar transistor for switching applications – MATLAB
2) Diode block – Diode – Piecewise linear, exponential, or tabulated diode – MATLAB.
After building the simulator, I ran it for sometime and obtained the simscape results data log for further analysis. And as mentioned in ee_getPowerLossSummary – Calculate dissipated power losses and switching losses – MATLAB, I used that method to estimate both switching and conduction losses using log data. I suppose that the "power" output of the function corresponds to conduction losses. Please advice me otherwise. If the "power" provides the total losses. The provided link of the ee_getPowerLossSummary, it says that the function is capable of estimating both conduction and switching losses for the above devices. Also, highlights that the reverse recovery loss can also be obtained.

However, when I run the simulation and run the function ee_GetPowerLossSummary afterwards, It only provides the conduction losses of the diode. Always, the diode losses are given as zero. It provides the conduction and switching losses for the IGBT. I have modeled the diode for reverse recovery operation by adding values from the datasheet. I was wondering whether there are any additional options to configure to get this to work. Also, I can see that the switching losses of the IGBTs fall drastically when a deadtime is used between High and Low switches in a same leg. When deadtime is not used, a signficant amount of switching losses are present. These observations have been made using the aforementioned ee_getPowerLossSummary function and as well as post processing the instantaneuos power waveforms obtained through power sensors. I don’t understand this since switching losses apply even when the deadtime is used since it only happens due to the IGBT’s own voltage and current. Not by the temporary shootthrough that happens if deadtime is not used.

Any suggestion, comment or advice regarding this process is highly appreciated. Thank you. Hello,
My objective is to estimate both conduction and switching losses of semiconductor devices that are used in a DAB converter operation. I have built a simulator using the blocks which can be found in the Simscape library blocks. The semiconductors have been modeled using
1) IGBT (ideal switching) block – IGBT (Ideal, Switching) – Ideal insulated-gate bipolar transistor for switching applications – MATLAB
2) Diode block – Diode – Piecewise linear, exponential, or tabulated diode – MATLAB.
After building the simulator, I ran it for sometime and obtained the simscape results data log for further analysis. And as mentioned in ee_getPowerLossSummary – Calculate dissipated power losses and switching losses – MATLAB, I used that method to estimate both switching and conduction losses using log data. I suppose that the "power" output of the function corresponds to conduction losses. Please advice me otherwise. If the "power" provides the total losses. The provided link of the ee_getPowerLossSummary, it says that the function is capable of estimating both conduction and switching losses for the above devices. Also, highlights that the reverse recovery loss can also be obtained.

However, when I run the simulation and run the function ee_GetPowerLossSummary afterwards, It only provides the conduction losses of the diode. Always, the diode losses are given as zero. It provides the conduction and switching losses for the IGBT. I have modeled the diode for reverse recovery operation by adding values from the datasheet. I was wondering whether there are any additional options to configure to get this to work. Also, I can see that the switching losses of the IGBTs fall drastically when a deadtime is used between High and Low switches in a same leg. When deadtime is not used, a signficant amount of switching losses are present. These observations have been made using the aforementioned ee_getPowerLossSummary function and as well as post processing the instantaneuos power waveforms obtained through power sensors. I don’t understand this since switching losses apply even when the deadtime is used since it only happens due to the IGBT’s own voltage and current. Not by the temporary shootthrough that happens if deadtime is not used.

Any suggestion, comment or advice regarding this process is highly appreciated. Thank you. simulink, dab, loss, igbt, diode, switching losses, reverse recovery losses MATLAB Answers — New Questions

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