n-Channel Mosfet 3-D Lookup table, temperature dependent parameterization. Problems simulating different temperatures
Hello, I am trying to simulate the behavior of a MOSFET at different temperatures (25ºC and 17ºC), but I am having some issues. I have chosen the n-Channel MOSFET model from the Simulink library and below I attach the circuit and the parameters I have used based on the curves provided by the manufacturer.
The parameterization used is a 3-D Lookup table, temperature dependent, and in the following image, you can see the matrix used for IDs (datos_Ids) which depends on Vgs, Vds, and T.
When the simulation is run, even if the value in Temperature Source is changed, the same simulation always results; it seems to be independent of the temperature.
Any suggestions?
Thank you very muchHello, I am trying to simulate the behavior of a MOSFET at different temperatures (25ºC and 17ºC), but I am having some issues. I have chosen the n-Channel MOSFET model from the Simulink library and below I attach the circuit and the parameters I have used based on the curves provided by the manufacturer.
The parameterization used is a 3-D Lookup table, temperature dependent, and in the following image, you can see the matrix used for IDs (datos_Ids) which depends on Vgs, Vds, and T.
When the simulation is run, even if the value in Temperature Source is changed, the same simulation always results; it seems to be independent of the temperature.
Any suggestions?
Thank you very much Hello, I am trying to simulate the behavior of a MOSFET at different temperatures (25ºC and 17ºC), but I am having some issues. I have chosen the n-Channel MOSFET model from the Simulink library and below I attach the circuit and the parameters I have used based on the curves provided by the manufacturer.
The parameterization used is a 3-D Lookup table, temperature dependent, and in the following image, you can see the matrix used for IDs (datos_Ids) which depends on Vgs, Vds, and T.
When the simulation is run, even if the value in Temperature Source is changed, the same simulation always results; it seems to be independent of the temperature.
Any suggestions?
Thank you very much 3-d lookup table, temperature dependent parameteri, n-channel mosfet MATLAB Answers — New Questions